elektronische bauelemente SMG2310A n-ch enhancement mode power mosfet 5.0 a, 60 v, r ds(on) =115 m 24-nov-2009 rev. a page 1 of 3 srohs compliant product a suffix of -c specifies halogen & lead-free descriptions the SMG2310A utilized advanced processing technique s to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. the SMG2310A is universally used for all co mmercial-industrial applications. features simple drive requirement, small package outline super high density cell design for extremely low r ds(on) marking code absolute maximum ratings parameter symbol ratings unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current 3 i d @t a =25c 5.0 a continuous drain current 3 i d @t a =70c 4.0 a pulsed drain current 1,2 i dm 10 a power dissipation p d @t a =25c 1.38 w linear derating factor 0.01 w/c operating junction & storage temperature range t j , t stg -55 ~ +150 c thermal data thermal resistance junction-ambient 3 max r ja 90 c /w electrical characteristics (tj = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions drain-source breakdown voltage bv dss 60 - - v v gs = 0, i d = 250 a gate threshold voltage v gs(th) 0.5 - 1.5 v v ds = v gs , i d = 250 a forward transconductance g fs - 12 - s v ds = 15v, i d = 4a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current(tj=25c) - - 1 a v ds = 60v, v gs = 0 drain-source leakage current(tj=55c) i dss - - 10 a v ds = 60v, v gs = 0 - - 115 v gs = 10 v, i d = 5.0 a static drain-source on-resistance r ds(on) - - 125 m v gs = 4.5 v, i d = 4.5 a total gate charge 2 q g - 4.0 - gate-source charge q gs - 1.2 - gate-drain (miller) charge q gd - 1.0 - nc i d = 4a v ds = 30v v gs = 4.5v turn-on delay time 2 t d(on) - 6 - rise time t r - 12 - turn-off delay time t d(off) - 18 - fall time t f - 10 - ns v dd = 30v r g = 6 i d = 2.5a, v gs = 10 v r l =12 input capacitance c iss - 320 - output capacitance c oss - 42 - reverse transfer capacitance c rss - 20 - pf v gs = 0 v v ds = 30v f = 1.0mhz source-drain diode forward on voltage 2 v sd - - 1.2 v i s = 2.5 a, v gs = 0v notes: 1. pulse width limited by max. junction temp erature. 2. pulse width Q 300 s, duty cycle Q 2%. 3. surface mounted on 1 in 2 copper pad of fr4 board; 270c/w when mounted on m in. copper pad. top view a l c b d g h j f k e 1 2 3 1 2 3 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.10 g 0.10 ref. b 2. 25 3 . 0 0 h 0.40 ref. c 1.3 0 1. 7 0 j 0.10 0.20 d 1.00 1.40 k 0.45 0.55 e 1.70 2.30 l 0.85 1.15 f 0.35 0.50 sc-59 1 gate 2 source drain 3 n-channel 2310a 1 g 2 s 3 d
elektronische bauelemente SMG2310A n-ch enhancement mode power mosfet 5.0 a, 60 v, r ds(on) =115 m 24-nov-2009 rev. a page 2 of 3 characteristic curve
elektronische bauelemente SMG2310A n-ch enhancement mode power mosfet 5.0 a, 60 v, r ds(on) =115 m 24-nov-2009 rev. a page 3 of 3 characteristic curve
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